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| New Product SI4114DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.006 at VGS = 10 V 0.007 at VGS = 4.5 V ID (A)a 20e 20 e FEATURES Qg (Typ.) 27.5 nC * TrenchFET(R) Power MOSFET * 100 % Rg and UIS Tested RoHS APPLICATIONS * Low-Side MOSFET for Synchronous Buck - Game Machine - PC COMPLIANT SO-8 D S S S G 1 2 3 4 Top View S Ordering Information: SI4114DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 16 20e 18.2 15.2b, c 12.1b, c 50 5.1 2.2b, c 30 45 5.7 3.6 2.5b, c 1.6b, c - 55 to 150 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t 10 s Steady State Symbol RthJA RthJF Typical 39 18 Maximum 50 22 Unit C/W Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. e. Package limited. Document Number: 68394 S-81012-Rev. A, 05-May-08 www.vishay.com 1 New Product SI4114DY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS , ID = 250 A VDS = 0 V, VGS = 16 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 7 A VDS = 10 V, ID = 10 A Min. 20 Typ. Max. Unit V 19 - 5.3 1.0 2.1 100 1 10 30 0.0049 0.0056 55 0.006 0.007 mV/C V nA A A S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta 3700 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 10 A VDS = 10 V, VGS = 4.5 V, ID = 10 A f = 1 MHz VDD = 10 V, RL = 2 ID 5 A, VGEN = 4.5 V, Rg = 1 0.15 745 315 62 27.5 8.0 6.0 0.7 30 13 60 30 13 VDD = 10 V, RL = 2 ID 5 A, VGEN = 10 V, Rg = 1 9 38 8 TC = 25 C IS = 2 A 0.71 26 IF = 10 A, dI/dt = 100 A/s, TJ = 25 C 16 13 13 1.4 55 25 100 55 25 18 65 16 5.1 50 1.1 50 30 ns 95 42 nC pF A V ns nC ns Notes a. Pulse test; pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68394 S-81012-Rev. A, 05-May-08 New Product SI4114DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 VGS = 10 thru 3 V 40 I D - Drain Current (A) I D - Drain Current (A) 2.4 3.0 30 1.8 20 1.2 TC = 125 C 0.6 10 VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = 25 C TC = - 55 C 0.0 0.0 0.8 1.6 2.4 3.2 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.0070 Transfer Characteristics 4500 Ciss R DS(on) - On-Resistance () 0.0064 VGS = 4.5 V 0.0058 3600 C - Capacitance (pF) 2700 0.0052 VGS = 10 V 0.0046 1800 Coss 900 Crss 0 4 8 12 16 20 0.0040 0 10 20 30 40 50 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 10 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V 6 VDS = 15 V 4 R DS(on) - On-Resistance VDS = 5 V 1.5 1.7 ID = 10 A Capacitance VGS = 4.5 V (Normalized) 1.3 VGS = 10 V 1.1 2 0.9 0 0 13 26 39 52 65 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68394 S-81012-Rev. A, 05-May-08 www.vishay.com 3 New Product SI4114DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 TJ = 150 C RDS(on) - On-Resistance () 10 I S - Source Current (A) TJ = 25 C 0.04 0.05 ID = 10 A 1 0.03 0.1 0.02 0.01 0.01 TJ = 25 C 0 2 4 6 TJ = 125 C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.6 170 On-Resistance vs. Gate-to-Source Voltage 0.3 V GS(th) Variance (V) ID = 250 A 136 0.0 Power (W) ID = 5 mA 102 - 0.3 68 - 0.6 34 - 0.9 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (s) 1 10 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) Single Pulse Power, Junction-to-Ambient 1 ms 10 ms 1 100 ms 1s 10 s DC TA = 25 C Single Pulse BVDSS 0.1 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68394 S-81012-Rev. A, 05-May-08 New Product SI4114DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 25 20 I D - Drain Current (A) 15 10 5 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Current Derating* 7.0 1.80 5.6 1.44 Power (W) 0 25 50 75 100 125 150 Power (W) 4.2 1.08 2.8 0.72 1.4 0.36 0.0 0.00 0 25 50 75 100 125 150 TC - Case Temperature (C) TA - Ambient Temperature (C) Power, Junction-to-Foot Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 175 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68394 S-81012-Rev. A, 05-May-08 www.vishay.com 5 New Product SI4114DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 PDM t1 Notes: 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68394. www.vishay.com 6 Document Number: 68394 S-81012-Rev. A, 05-May-08 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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